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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D119
BYD53 series Fast soft-recovery controlled avalanche rectifiers
Product specification Supersedes data of 1996 Sep 18 1998 Dec 04
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * Available in ammo-pack.
handbook, 4 columns
BYD53 series
hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION Cavity free cylindrical glass SOD81 package through ImplotecTM(1) technology. The SOD81 package is
k
a
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD53D BYD53G BYD53J BYD53K BYD53M BYD53U BYD53V VR continuous reverse voltage BYD53D BYD53G BYD53J BYD53K BYD53M BYD53U BYD53V IF(AV) average forward current BYD53D to M BYD53U and V IF(AV) average forward current BYD53D to M BYD53U and V IFRM repetitive peak forward current BYD53D to M BYD53U and V Ttp = 55 C; lead length = 10 mm see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 65 C; PCB mounting (see Fig.17); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 Ttp = 55 C; see Figs 6 and 7 - - 6.5 8.25 A A - - - - - - - - - - - 200 400 600 800 1000 1200 1400 0.75 0.85 V V V V V V V A A PARAMETER repetitive peak reverse voltage - - - - - - - 200 400 600 800 1000 1200 1400 V V V V V V V CONDITIONS MIN. MAX. UNIT
0.40 0.45
A A
1998 Dec 04
2
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
SYMBOL IFRM PARAMETER repetitive peak forward current BYD53D to M BYD53U and V IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off see Fig.12 CONDITIONS Tamb = 65 C; see Figs 8 and 9 - - -
BYD53 series
MIN.
MAX. 3.6 4.45 5 A A A
UNIT
ERSM Tstg Tj
non-repetitive peak reverse avalanche energy storage temperature junction temperature
- -65 -65
10 +175 +175
mJ C C
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYD53D to M BYD53U and V VF forward voltage BYD53D to M BYD53U and V V(BR)R reverse avalanche breakdown voltage BYD53D BYD53G BYD53J BYD53K BYD53M BYD53U BYD53V IR reverse current VR = VRRMmax; see Fig.15 VR = VRRMmax; Tj = 165 C; see Fig.15 trr reverse recovery time BYD53D to J BYD53K and M BYD53U and V Cd diode capacitance f = 1 MHz; VR = 0; see Fig.16 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.18 IR = 0.1 mA 300 500 700 900 1100 1300 1500 - - - - - - - - - - - - - - - - - - 1 100 V V V V V V V A A IF = 1 A; see Figs 13 and 14 - - - - 3.6 2.3 V V CONDITIONS IF = 1 A; Tj = Tj max; see Figs 13 and 14 MIN. - - TYP. - - MAX. 2.1 1.7 V V UNIT
- - - -
- - - 20
30 75 150 -
ns ns ns pF
1998 Dec 04
3
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
SYMBOL dI R -------dt PARAMETER maximum slope of reverse recovery current BYD53D to J BYD53K and M BYD53U and V THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm CONDITIONS when switched from IF = 1 A to VR 30 V and dIF/dt = -1 A/s; see Fig.19 MIN.
BYD53 series
TYP.
MAX.
UNIT
- - -
- - -
7 6 5
A/s A/s A/s
VALUE 60 120
UNIT K/W K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.17. For more information please refer to the `General Part of associated Handbook'.
1998 Dec 04
4
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
GRAPHICAL DATA
MGM267
BYD53 series
handbook, halfpage
1.0
IF(AV) (A)
handbook, halfpage
1.6
MLC303
I F(AV) (A) 1.2
0.8
0.6 0.8 0.4
lead length 10 mm
0.4 0.2
0 0 40 80 120 160 200 Ttp (C)
0 0 BYD53U and V a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. 100 T tp ( oC) 200
BYD53D to M a = 1.42; VR = VRRMmax; = 0.5. Switched mode application.
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
handbook, halfpage
0.6
MGM266
handbook, halfpage
0.8
MLC304
IF(AV) (A) 0.4
I F(AV) (A) 0.6
0.4
0.2 0.2
0 0 40 80 120 160 200 Tamb (C)
0
0
100
Tamb ( o C)
200
BYD53D to M a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig. 17. Switched mode application.
BYD53U and V a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig. 17. Switched mode application.
Fig.4
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
Fig.5
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
1998 Dec 04
5
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYD53 series
handbook, full pagewidth
8
MGM269
IFRM (A) 6 = 0.05
0.1 4
0.2
2
0.5 1
0 10-2
10-1
1
10
102
103
tp (ms)
104
BYD53D to M Ttp = 55C; Rth j-tp = 60 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1400 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
10
MLC307
I FRM (A) 8 = 0.05 6 0.1 4 0.2
2
0.5
1 0 10 2 10 1 1 10 10 2 10 3 10 4
t p (ms)
BYD53U and V Ttp = 55C; Rth j-tp = 60 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1998 Dec 04
6
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYD53 series
handbook, full pagewidth
4
MGM268
IFRM (A) 3
= 0.05
0.1 2 0.2
1
0.5 1
0 10-2
10-1
1
10
102
103
tp (ms)
104
BYD53D to M Tamb = 65 C; Rth j-a = 120 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1400 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
5
MLC308
I FRM (A) 4 = 0.05
3 0.1 2 0.2
1
0.5
1 0 10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYD53U and V Tamb = 65 C; Rth j-a = 120 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1998 Dec 04
7
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYD53 series
handbook, halfpage
4
MGM265
handbook, halfpage
3
MLC302
P (W) 3 a = 3 2.5 2 1.57 1.42
P (W) a = 3 2.5 2 2 1.57 1.42
2
1 1
0 0 0.2 0.4 0.6 0.8 1.0 IF(AV) (A)
0
0
0.5
I F(AV) (A)
1.0
BYD53D to M a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.
BYD53U and V a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.
Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
handbook, halfpage
200
MBK457
handbook, halfpage
6
MGM264
Tj ( oC)
IF (A) 4
100
2 D G J K M U V
0
0 0 1000 VR (V) 2000 0 2 4 6 8 VF (V) 10
Solid line = VR. Dotted line = VRRM; = 0.5.
BYD53D to M Dotted line: Tj = 175 C. Solid line: Tj = 25 C.
Fig.12 Maximum permissible junction temperature as a function of reverse voltage.
Fig.13 Forward current as a function of forward voltage; maximum values.
1998 Dec 04
8
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYD53 series
handbook, halfpage
6
MLC301
103 handbook, halfpage IR (A)
MGA853
IF (A) 4
102
2
10
0
0
1
2
3
4
V F (V)
5
1 0 100 T j ( o C) 200
BYD53U and V Dotted line: Tj = 175 C. Solid line: Tj = 25 C.
VR = VRRMmax.
Fig.14 Forward current as a function of forward voltage; maximum values.
Fig.15 Reverse current as a function of junction temperature; maximum values.
102 handbook, halfpage
MLC305
handbook, halfpage
50 25
Cd (pF) 7 50 10
2 3 1 1 10 10
2
V R (V)
103
MGA200
f = 1 MHz; Tj = 25 C. Dimensions in mm.
Fig.16 Diode capacitance as a function of reverse voltage; typical values.
Fig.17 Device mounted on a printed-circuit board.
1998 Dec 04
9
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYD53 series
handbook, full pagewidth
DUT +
IF (A) 0.5 1 t rr
10
25 V 50 0 0.25 0.5 IR (A) 1
t
MAM057
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns.
Fig.18 Test circuit and reverse recovery time waveform and definition.
IF andbook, halfpage dI F dt t rr 10% t dI R dt 100% IR
MGC499
Fig.19 Reverse recovery definitions.
1998 Dec 04
10
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
PACKAGE OUTLINE Hermetically sealed glass package; ImplotecTM(1) technology; axial leaded; 2 leads
BYD53 series
SOD81
G1
(2)
k
a
b
D
L
G
L
DIMENSIONS (mm are the original dimensions) UNIT mm b max. 0.81 D max. 2.15 G max. 3.8 G1 max. 5 L min. 28 0 1 scale 2 mm
Notes 1. Implotec is a trademark of Philips. 2. The marking band indicates the cathode. OUTLINE VERSION SOD81 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-20
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1998 Dec 04
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135106/00/04/pp12
Date of release: 1998 Dec 04
Document order number:
9397 750 04887

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